Publications
M. Ortsiefer, W. Hofmann, J. Rosskopf, and M.-C. Amann: “Long-Wavelength VCSELs with Buried Tunnel Junction”, Chapter in Vertical-Cavity Surface-Emitting Laser Devices, second edition, Springer-Verlag, Berlin, to be published in 2011
K. Prince, M. Ma, T. B. Gibbon, C. Neumeyr, E. Rönneberg, M. Ortsiefer, and I. T. Monroy, “Free-Running 1550 nm VCSEL for 10.7 Gb/s Transmission in 99.7 km PON”, Journal of Optical Communications and Networking, 3, 399-403, 2011
M. Ortsiefer, “Challenges, solutions and prospects of long-wavelength VCSELs”, Compound Semiconductor Week – 38th International Symposium on Compound Semiconductors (ISCS), 23rd International Conference on Indium Phosphide and Related Materials (IPRM), Berlin, (invited short course), 2011
T. Gründl, R. D. Nagel, P. Debernardi, K. Geiger, C. Grasse, M. Ortsiefer, J. Rosskopf , G. Böhm, R. Meyer, and M.-C. Amann, “Novel concept for a Monolithically Integrated MEMS VCSEL”, Indium Phosphide and Related Materials (IPRM), Conference Digest, WE-7.2.2, Berlin, 2011
M. Beltrán, J. B. Jensen, X. Yu, R. Llorente, R. Rodes, M. Ortsiefer, C. Neumeyr, and I. T. Monroy: “Performance of a 60-GHz DCM-OFDM and BPSK-Impulse Ultra-Wideband System with Radio-over-Fiber and Wireless Transmission Employing a Directly-Modulated VCSEL”, IEEE Journal on Selected Areas in Communications: Special Issue on Distributed Broadband Wireless Communications, 29, 1295-1303, 2011
G. Böhm, A. Bachmann, J. Rosskopf, M. Ortsiefer, J. Chen, A. Hangauer, R. Meyer, R. Strzoda, and M.-C. Amann: “Comparison of InP-and GaSb-based VCSELs emitting at 2.3 µm suitable for carbon monoxide detection”, Journal of Crystal Growth, 323, 442-445, 2011
M. Ortsiefer, C. Neumeyr, J. Rosskopf, S. Arafin, G. Böhm, A. Hangauer, J. Chen, R. Strzoda, and M.-C. Amann: “GaSb and InP-based VCSELs at 2.3 µm emission wavelength for tuneable diode laser spectroscopy of carbon monoxide”, Proc. of SPIE Photonics West, San Francisco, Paper 7945-9 (invited talk) , 2011
P. Meissner, K. Zogal, C. Gierl, S. Jatta, H. Davani, T. Gründl, C. Grasse, M.-C. Amann, A. Daly, B. Corbett, B. Kögel, Å. Haglund, J. Gustavsson, P. Westbergh, A. Larsson, P. Debernardi, and M. Ortsiefer: “Tuneable VCSELs aiming for the application in interconnects and short haul systems”, Proc. of SPIE Photonics West, San Francisco, Paper 7959-7 , 2011
R. Rodes, J. B. Jensen, D. Zibar, C. Neumeyr, E. Roenneberg, J. Rosskopf, M. Ortsiefer, and I. T. Monroy, “All-VCSEL based digital coherent detection link for multi Gbit/s WDM passive optical networks”, Optics Express, 18, 24969-24974, 2010
T. Gründl, K. Zogal, M. Müller, R. Nagel, S. Jatta, K. Geiger, C. Grasse, G. Böhm, M. Ortsiefer, P. Meissner, and M.C. Amann, “High-speed high-power VCSELs based on InP suitable for telecommunication and gas sensing”, SPIE Remote Sensing, Security and Defense, paper: 7828-6, Toulouse, 2010
G. Böhm, A. Bachmann, J. Rosskopf, M. Ortsiefer, J. Chen, A. Hangauer, R. Meyer, R. Strzoda, and M.-C. Amann: “Comparison of InP- and GaSb-based VCSELs emitting at 2.3 μm suitable for Carbon Monoxide detection”, 16th International Conference on Molecular Beam Epitaxy, Tue B1.1, Berlin, 2010
M. Müller, W. Hofmann, A. Nadtochiy, A. Mutig, G. Böhm, M. Ortsiefer, D. Bimberg and M.-C. Amann: “1.55 µm High-Speed VCSELs Enabling Error-Free Fiber Transmission up to 25 Gbit/s”, IEEE 22nd International Semiconductor Laser Conference, WC3, Kyoto, 2010
T. B. Gibbon, K. Prince, C. Neumeyr, E. Rönneberg, M. Ortsiefer, and I. T. Monroy: “10 Gb/s 1550 nm VCSEL transmission over 23.6 km SMF with no Dispersion Compensation and no Injection Locking for WDM PONs”, Optical Fiber Conference (OFC), JThA30, San Diego, 2010
A. J. Daly, B. J. Roycroft, F. H. Peters, M. Ortsiefer, and B. Corbett: “Dynamics of 1.55 µm buried tunnel junction VCSELs under optical injection around threshold”, Proc. of SPIE Photonics West, San Francisco, Vol. 7615, 7615-25, 2010
M. Ortsiefer, M. Görblich, Y. Xu, E. Rönneberg, J. Rosskopf, R. Shau, and M.-C. Amann: “Polarization Control in Buried Tunnel Junction VCSELs Using a Birefringent Semiconductor/Dielectric Subwavelength Grating “, IEEE Photonics Technology Letters, 22, 15-17, 2010
P. Meissner, B. Kögel, K. Zogal, S. Jotta, C. Gierl, C. Grasse, T. Gründl, M.-C. Amann, P. Westbergh, A. Larsson, and M. Ortsiefer: “Widely Tuneable Micromachined VCSELs”, 10th Chitose International Forum on Photonics Science & Technology, Chitose, 2009
C. Grasse, M. Müller, G. Böhm, R. Enzmann, Y. Xu, M. Görblich, R. Meyer, M. Ortsiefer, and M.-C. Amann, “Planarization of overgrown tunnel junctions for InP-based VCSEL by MOVPE”, European Workshop on Metalorganic Vapor Phase Epitaxy, paper:EWMOVPE XIII , Ulm, 2009
M. Ortsiefer, J. Rosskopf, R. Shau, Y. Xu, M. Görblich, C. Neumeyr, C. Gréus, and E. Rönneberg: “Long-wavelength VCSELs for TDLS applications”, Field Laser Applications in Industry and Research (FLAIR), Garmisch-Partenkirchen, 2009
M. Müller, W. Hofmann, G. Böhm, J. Rosskopf, E. Rönneberg, M. Ortsiefer, and M.-C. Amann: “1.55 µm InP-based short-cavity VCSELs with enhanced modulation-bandwidth of 15 GHz”, 35th European Conference on Optical Communication (ECOC), Vienna, 2009
W. Hofmann, L. Grüner-Nielsen, E. Rönneberg, G. Böhm, M. Ortsiefer, and M.-C. Amann: “1.55 µm VCSEL Modulation Performance With Dispersion-Compensating Fibers”, IEEE Photonics Technology Letters, 21, 1072-1074, 2009
W. Hofmann, N. H. Zhu, M. Görblich, L. Xie, G. Böhm, M. Ortsiefer, and M.-C. Amann: “1.55 µm VCSEL Arrays for Optical Multiple-Input Multiple-Output (MIMO)”, Conference on Lasers and Electro Optics (CLEO), JTUD17, Baltimore, 2009
A. Hangauer, J. Chen, R. Strzoda, M. Fleischer, M. Ortsiefer, and M.-C. Amann: “Compact and Calibration-free Carbon Monoxide Sensor Using a 2.3 µm Vertical-Cavity Surface-Emitting Laser”, Sensor + Test, Nürnberg, 2009
W. Hofmann, M. Müller, G. Böhm, M. Ortsiefer, and M.-C. Amann: “1.55 µm VCSEL with Enhanced Modulation Bandwidth and Temperature Range”, IEEE Photonics Technology Letters, 21, 923-925, 2009
A. Gatto, A. Boletti, P. Boffi, C. Neumeyr, M. Ortsiefer, E. Rönneberg, and M. Martinelli: “1.3-µm VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks”, IEEE Photonics Technology Letters, 21, 778-780, 2009
W. Hofmann, M. Müller, G. Böhm, M. Ortsiefer, and M.-C. Amann: “1.55 µm InP-Based VCSEL with Enhanced Modulation Bandwidths > 10 GHz up to 85°C”, Optical Fiber Conference (OFC), OTuK5, San Diego, 2009
J. Chen, A. Hangauer , R. Strzoda, M. Ortsiefer, M. Fleischer, and M.-C. Amann: “Compact carbon mono-xide sensor using a continuously tunable 2.3 μm single-mode VCSEL”, 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS), 721-722, Newport Beach, 2008
W. Hofmann, M. Görblich, G. Böhm, M. Ortsiefer, L. Xie, and M.-C. Amann: “Long-Wavelength 2-D VCSEL Arrays for Optical Interconnects”, Conference on Lasers and Electro Optics (CLEO), CMW7, San Jose, 2008
W. Hofmann, N.-H. Zhu, G. Böhm, M. Ortsiefer, L. Xie, L. Yu, and M.-C. Amann: “Optical MIMO with VCSEL arrays”, 2008 IEEE/LEOS, Semiconductor Laser Workshop, Santa Fe, 2008
M. Ortsiefer, J. Rosskopf, E. Rönneberg, Y. Xu, K. Maisberger, R. Shau, C. Neumeyr, W. Hofmann, G. Böhm, A. Hangauer, J. Chen, R. Strzoda, and M.-C. Amann: “Extended Near-Infrared Wavelength VCSELs for Optical Sensing”, IEEE 21st International Semiconductor Laser Conference, Sorrento, 2008, ISBN: 978-1-4244-1783-4, 167-168
W. Hofmann, M. Görblich, M. Ortsiefer, G. Böhm, and M.-C. Amann: “One and Two-dimensional Long-Wavelength VCSEL arrays for WDM Applications and Optical Interconnects”, IEEE 21st International Semiconductor Laser Conference, Sorrento, 2008, ISBN: 978-1-4244-1783-4, 165-166
W. Hofmann, M. Görblich, M. Ortsiefer, G. Böhm, and M.-C. Amann: “High-Power Long-Wavelength VCSEL Arrays”, IEEE 21st International Semiconductor Laser Conference, Sorrento, 2008, ISBN: 978-1-4244-1783-4, 141-142
W. Hofmann, M. Ortsiefer, E. Rönneberg, C. Neumeyr, G. Böhm, and M.-C. Amann: “1.3 μm InGaAlAs/InP VCSEL for 10G Ethernet”, IEEE 21st International Semiconductor Laser Conference, Sorrento, 2008, ISBN: 978-1-4244-1783-4, 11-12
A. Hangauer, J. Chen, R. Strzoda, M. Ortsiefer, and M.-C. Amann: “Wavelength modulation spectroscopy with a widely tunable InP-based 2.3 µm vertical-cavity surface-emitting laser”, Optics Letters, 33, 1566-1568, 2008
M. Ortsiefer, W. Hofmann, E. Rönneberg, A. Boletti, A. Gatto, P. Boffi, J. Rosskopf, R. Shau, C. Neumeyr, G. Böhm, M. Martinelli, and M.-C. Amann: “High speed 1.3 µm VCSELs for 12.5 Gbit/s optical interconnects”, Electron. Lett., 44, 974-975, 2008
S. T. Fard, W. Hofmann, P. T. Fard, G. Böhm, M. Ortsiefer, G. Böhm, E. Kwok, M.C. Amann, and L. Chrostowski: “Optical Absorption Glucose Measurements Using 2.3 µm Vertical-Cavity Semiconductor Lasers”, IEEE Photonics Technology Letters, 20, 930-932, 2008
W. Hofmann, G. Böhm, M. Ortsiefer, and M.-C. Amann: "Long-wavelength VCSELs and VCSEL arrays for high-speed, high-power and high sensitivity", III. International Conference on Laser Processes and Components (LPC 2008), Shanghai, 2008
P. Debernardi, B. Kögel, K. Zogal, P. Meissner, M. Maute, M. Ortsiefer, G. Böhm, and M.-C. Amann: "Modal Properties of Long-Wavelength Tunable MEMS-VCSELs With Curved Mirrors: Comparison of Experiment and Modeling", IEEE J. Quantum Electron., 44, 391-399, 2008
W. Hofmann, E. Wong, G. Böhm, M. Ortsiefer, N. H. Zhu, and M.-C. Amann: "1.55 µm VCSEL Arrays for High-Bandwidth WDM PONs", IEEE Photonics Technology Letters, 20, 291-293, 2008
W. Hofmann, E. Wong, G. Böhm, M. Ortsiefer, and M.-C. Amann: "1 > 12 VCSEL Array at 1.55 µm for High-Bandwidth at Metro-Range”, 33rd European Conference on Optical Communication, Berlin, 2007, Wed 8.1.3
W. Hofmann, G. Böhm, M. Ortsiefer, M. Görblich, C. Lauer, N. H. Zhu, and M.-C. Amann: "Long-wavelength VCSELs for optical networks and trace-gas monitoring”, SPIE Optics East, Boston 2007, 6766-14
W. Hofmann, M. Görblich, M. Ortsiefer, G. Böhm, and M.-C. Amann: "Long-wavelength high-power VCSEL Arrays", European Semiconductor Laser Workshop, Berlin, 2007
W. Hofmann, M. Görblich, M. Ortsiefer, G. Böhm, and M.-C. Amann: "Long-wavelength (<=1.55 µm) monolithic VCSEL array with >3 W CW output power", Electron. Lett., 43, 2007, 1025-1026
M. Ortsiefer, J. Rosskopf, R. Shau, C. Gréus, and E. Rönneberg: "Recent developments and prospects of long-wavelength VCSELs for TDLS applications", Field Laser Applications in Industry and Research (FLAIR), Florence, 2007
G. Böhm, M. Grau, O. Dier, K. Windhorn, E. Rönneberg, J. Rosskopf, R. Shau, R. Meyer, M. Ortsiefer, and M.-C. Amann: "Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 µm", Journal of Crystal Growth, 301-302, 2007, 941-944
M.-C. Amann and M. Ortsiefer: "Long-wavelength (λ ≥ 1.3 µm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing", Phys. Stat. Sol. (a), 203, 2006, 3538-3544
W. Hofmann, G. Böhm, M. Ortsiefer, E. Wong, and M.-C. Amann: "Uncooled High Speed (>11 GHz) 1.55 µm VCSELs for CWDM access networks", 32nd European Conference on Optical Communication, Cannes, 2006, Post-deadline session Th4.5.4
L. Chrostowski, B. Faraji, W. Hofmann, R. Shau, M. Ortsiefer, and M.-C. Amann: "40 GHz Bandwidth and 64 GHz Resonance Frequency in Injection-Locked 1.55 µm VCSELs", IEEE 20th International Semiconductor Laser Conference, Hawaii, 2006, Conference Digest 117-118
M. Ortsiefer, M. Grau, J. Rosskopf, R. Shau, K. Windhorn, E. Rönneberg, G. Böhm, W. Hofmann, O. Dier, and M.-C. Amann: "InP-based VCSELs with buried tunnel junction for optical communication and sensing in the 1.3-2.3 µm wavelength range", IEEE 20th International Semiconductor Laser Conference, Hawaii, 2006, Conference Digest 113-114
M. Van Uffelen, J. Mols, M. Ortsiefer, and F. Berghmans: “Ionizing radiation effects on long-wavelength VCSELs up to MGy dose levels”, Radiation Effects on Components and Systems (RADECS), Athens 2006
G. Böhm, O. Dier, R. Meyer, M.-C. Amann, M. Grau, K. Windhorn, E. Rönneberg, J. Rosskopf, R. Shau, and M. Ortsiefer: „Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 µm“, 14th International Conference on Molecular Beam Epitaxy, Tokyo, 2006, Conference Digest 104
W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Böhm, Y. Liu, and M.-C. Amann: "High speed (>11 GHz) modulation of BCB-passivated 1.55 µm InGaAlAs-InP VCSELs", Electron. Lett., 42, 2006, 976-977
M. Ortsiefer, G. Böhm, M. Grau, K. Windhorn, E. Rönneberg, J. Rosskopf, R. Shau, O. Dier, and M.-C. Amann: "Electrically pumped room temperature CW VCSELs with 2.3 µm emission wavelength", Electron. Lett., 42, 2006, 640-641
W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Böhm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann: "10-Gb/s Data Transmission Using BCB Passivated 1.55 µm InGaAlAs-InP VCSELs", IEEE Photonics Technology Letters, 18, 424-426, 2006
L. Chrostowski, X. Zhao, C. J. Chang-Hasnain, R. Shau, M. Ortsiefer, and M.-C. Amann: "50-GHz Optically Injection-Locked 1.55-µm VCSELs", IEEE Photonics Technology Letters, 18, 367-369, 2006
R. Shau: "Langwellige oberflächenemittierende Laserdioden mit hoher Ausgangs¬leistung und Modulationsbandbreite", „Selected Topics of Semiconductor Physics and Technology“, 69, ISBN 3 932749-69-3, 2005
M. Ortsiefer, G. Böhm, M. Grau, K. Windhorn, E. Rönneberg, J. Rosskopf, R. Shau, O. Dier, and M.-C. Amann: "Electrically pumped room temperature CW VCSELs with 2.3 µm emission wavelength", Electron. Lett., 42, 2006, 640-641
L. Chrostowski, X. Zhao, C. J. Chang-Hasnain, R. Shau, M. Ortsiefer, and M.-C. Amann: "50-GHz Optically Injection-Locked 1.55-µm VCSELs", IEEE Photonics Technology Letters, 18, 367-369, 2006
R. Shau: "Langwellige oberflächenemittierende Laserdioden mit hoher Ausgangs¬leistung und Modulationsbandbreite", „Selected Topics of Semiconductor Physics and Technology“, 69, ISBN 3 932749-69-3, 2005
M. Ortsiefer, S. Baydar, K. Windhorn, G. Böhm, J. Rosskopf, R. Shau, E. Rönneberg, W. Hofmann, and M.-C. Amann: "2.5 mW Single-Mode Operation of 1.55 µm Buried Tunnel Junction VCSELs", IEEE Photonics Technology Letters, 17, 1596-1598, 2005
M. Ortsiefer, S. Baydar, K. Windhorn, E. Rönneberg, J. Rosskopf, R. Shau, M. Grau, G. Böhm, and M.-C. Amann: "Long-wavelength monolithic VCSEL arrays with high optical output power", Electron. Lett., 41, 2005, 807-808
M. Ortsiefer, R. Shau, J. Rosskopf, S. Baydar, K. Windhorn, and E. Rönneberg: "VCSELs in the 1.3-2 µm Wavelength Range for TDLS Applications", 5th International Conference on Tunable Diode Laser Spectroscopy (TDLS), Florence 2005
M.-C. Amann and M. Ortsiefer: "Single-Mode and Wavelength-Tunable Long-Wavelength VCSELs", OptoElectronics and Communications Conference (OECC), Seoul 2005
M. Maute, G. Böhm, M.-C. Amann, F. Riemenschneider, B. Koegel, P. Meissner, and M. Ortsiefer: "Coupled Cavity Phenomena within MEMS-Tunable Long-Wavelength VCSELs", Conference on Lasers and Electro-Optics (CLEO), CThA4, Baltimore 2005
M.-C. Amann: "Long Wavelength VCSELs", Optical Fiber Conference (OFC), OThM1, Anaheim 2005
L. Chrostowski, X. Zhao, R. Shau, M. Ortsiefer, M.-C. Amann, and C. J. Chang-Hasnain: "50 GHz Directly–Modulated Injection-Locked 1.55 µm VCSELs", Optical Fiber Conference (OFC), OThM2, Anaheim 2005
H. Halbritter, R. Shau, F. Riemenschneider, B. Kögel, M. Ortsiefer, J. Rosskopf, G. Böhm, M. Maute, M.-C. Amann, and P. Meissner: "Chirp and linewidth enhancement factor of 1.55 µm VCSEL with buried tunnel junction", Electron. Lett., 40, 2004, 1266-1268
M. Ortsiefer, M. Lackner, R. Shau, J. Rosskopf, G. Böhm, C. Lauer, M. Maute, F. Winter, and M.-C. Amann: "Long-wavelength Vertical-Cavity Surface-Emitting Lasers for Sensing Applications in the 1.4 to 2 µm Wavelength Range", 8th International Conference for Infrared Sensors and Systems (IRS), Nuremberg 2004
X. Zhao, M. Moewe, L. Chrostowski, C.-H. Chang, R. Shau, M. Ortsiefer, M.-C. Amann, and C. J. Chang-Hasnain: "28 GHz optical injection-locked 1.55 µm VCSELs", Electron. Lett., 40, 2004, 476-478
L. Chrostowski, X. Zhao, R. Shau, M. Ortsiefer, M.-C. Amann, and C. J. Chang-Hasnain: "Very High Resonance Frequency (>40 GHz) Optical Injection-Locked 1.55 µm VCSELs", International Topical Meeting on Microwave Photonics (MWP), Ogunquit, 2004
C. Lauer, M. Ortsiefer, R. Shau, J. Rosskopf, G. Böhm, R. Meyer, and M.-C. Amann: "InP-based long-wavelength vertical-cavity surface-emitting lasers with buried tunnel junction", Phys. Stat. Sol. (C), 1, 2004, 2183-2209
M. Maute and M.-C. Amann: "Long-Wavelength VCSELs", Indiumphsosphide and Related Materials, Kagoshima 2004
C. Lauer, M. Ortsiefer, R. Shau, J. Rosskopf, G. Böhm, E. Rönneberg, F. Köhler, M. Maute, and M.-C. Amann: "80°C Continuous-Wave Operation of 2.01 µm Wavelength InGaAlAs/InP Vertical-Cavity Surface-Emitting Lasers", IEEE Photonics Technology Letters, 16, 2209-2211, 2004
R. Shau, M. Ortsiefer, J. Rosskopf, G. Böhm, C. Lauer, M. Maute, and M.-C. Amann: "Long-wavelength InP-based VCSELs with Buried Tunnel Junction: Properties and Applications", Vertical-Cavity Surface-Emitting Lasers VIII, Proceedings of SPIE, 5364, 1-15, 2004
F. Riemenschneider, M. Maute, H. Halbritter, G. Böhm, M.-C. Amann, and P. Meissner: "Continuously Tunable Long-Wavelength MEMS-VCSEL With Over 40-nm Tuning Range", IEEE Photonics Technology Letters, 16, 2212-2214, 2004
M. Maute, F. Riemenschneider, M. Ortsiefer, R. Shau, P. Meissner, and M.-C. Amann: "A Novel 2-Chip Concept for Micro-Mechanically Tunable Long-Wavelength VCSELs for the 1.55 µm Wavelength Range", Photonics Europe, Strasbourg 2004
W. Hofmann, N. H. Zhu, M. Ortsiefer, R. Shau, J. Rosskopf, G. Böhm, C. Qiuan, F. Köhler, M. Maute, C. Lauer, and M.-C. Amann: "High-Speed Vertical-Cavity Laser Diodes at 1.55 µm", Third Joint Symposium on Opto- & Microelectronic Devices and Circuits, Wuhan 2004
M. Maute, F. Riemenschneider, G. Böhm, H. Halbritter, M. Ortsiefer, R. Shau, P. Meissner, and M.-C. Amann: "Micro-Mechanically Tunable Long Wavelength VCSEL with a Buried Tunnel Junction", Electron. Lett., 40, 2004, 430-431
C.-H. Chang, L. Chrostowski, M. Moewe, C. J. Chang-Hasnain, R. Shau, M. Ortsiefer, and M.-C. Amann: "Injection-Locked 1.55 µm VCSELs with ~23 GHz Bandwidth", Optical Fiber Conference (OFC), Anaheim 2004
C. Lauer, S. Szalay, M. Ortsiefer, R. Shau, J. Rosskopf, G. Böhm, F. Köhler, M. Maute, C. Lin, and M.-C. Amann: "Laser hygrometer using a vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 1.84 µm", accepted for publication in IEEE Transactions on Instrumentation and Measurement
M. Ortsiefer, M. Fürfanger, J. Rosskopf, G. Böhm, F. Köhler, C. Lauer, M. Maute, W. Hofmann, and M.-C. Amann: "Singlemode 1.55 µm VCSELs with low threshold and high output power", Electron. Lett., 39, 2003, 1731-1732
R. Shau, H. Halbritter, F. Riemenschneider, M. Ortsiefer, J. Rosskopf, G. Böhm, M. Maute, P. Meissner, and M.-C. Amann: "Linewidth of InP-based 1.55 µm VCSELs with buried tunnel junction", Electron. Lett., 39, 2003, 1728-1729
M. Ortsiefer, R. Shau, J. Rosskopf, M. Fürfanger, M.-C. Amann, C. Lauer, M. Maute, G. Böhm, M. Lackner, and F. Winter: "InP-based VCSELs in the 1.4-2 µm wavelength range for optical communication and absorption spectroscopy", 16th Annual Meeting of the IEEE Lasers & Electro-Optics Society (LEOS 2003), Tucson 2003, Proceedings WD4
M.-C. Amann: "Long-wavelength InP-based VCSELs", 29th European Conference on Optical Communication, Rimini 2003, Proceedings Tu1.5.1
C. Lauer, M. Ortsiefer, R. Shau, J. Rosskopf, M. Maute, G. Böhm, F. Köhler, and M.-C. Amann: "Improvement of the differential series resistance of buried tunnel junction (BTJ) VCSELs", European Semiconductor Laser Workshop, Turin 2003
M. Ortsiefer, R. Shau, M. Lackner, G. Totschnig, F. Winter, J. Rosskopf, C. Lauer, and M.-C. Amann: "Long-wavelength vertical-cavity surface-emitting lasers for molecular absorption spectroscopy in the 1.5-2 µm range", 4th International Conference on Tunable Diode Laser Spectroscopy, Zermatt 2003, Conference Digest 33
M. Lackner, G. Totschnig, F. Winter, R. Shau, J. Rosskopf, M. Ortsiefer, and M.C. Amann: "Pollutant reduction by in-situ combustion diagnostics at high pressures using a novel near infrared diode laser, the vertical-cavity surface-emitting laser (VCSEL)", CLEAN AIR, Lisbon 2003
M. Lackner , G. Totschnig, F. Winter, R. Shau, M. Ortsiefer, J. Rosskopf, and M.C. Amann: "Spektroskopischer Einsatz neuer, langwelliger (bis 2 µm) Diodenlaser (VCSEL) für schwierige Bedingungen", Technisches Messen, 6, 2003, 294-305
M. Lackner, G. Totschnig, F. Winter, R. Shau, J. Rosskopf, M. Ortsiefer, and M.-C.Amann: "Rapid high resolution absorption spectroscopy using long wavelength InP-based VCSELs at 1.54 µm (NH3), 1.68 µm (CH4) and 1.80 µm (H2O, HCl)", Conference on Lasers and Electro-Optics (CLEO), Baltimore 2003, Technical Digest xxx, ISBN xxxxxxxxxx
G. Totschnig, M. Lackner, F. Winter, R. Shau, M. Ortsiefer, J. Rosskopf, and M.C. Amann: "High speed vertical-cavity surface-emitting laser (VCSEL) absorption spectroscopy of ammonia (NH3) near 1.54 µm", Applied Physics B, 76, 2003, 603-608
G. Totschnig, M. Lackner, R. Shau, M. Ortsiefer, J. Rosskopf, M.-C. Amann, and F. Winter: "1.8 µm vertical-cavity surface-emitting laser absorption measurements of HCl, H2O and CH4", Meas. Sci. Technol., 14, 2003, 472-478
M. Ortsiefer, R. Shau, J. Rosskopf, M. Fürfanger, M.-C. Amann, C. Lauer, M. Maute, G. Böhm, M. Lackner, and F. Winter: "InP-based VCSELs in the 1.4 to 2 µm wavelength range for optical communication and absorption spectroscopy", Lasers and Electro-Optics Society (LEOS), 16th Annual Meeting, 2, 2003, 505-506
C. Lauer, M. Ortsiefer, R. Shau, J. Rosskopf, G. Böhm, M. Maute, F. Köhler, and M.-C. Amann: "Electrically pumped room temperature CW-VCSELs with emission wavelength of 2 µm", Electron. Lett., 39, 2003, 57-58
M. Lackner, G. Totschnig, F. Winter, M. Ortsiefer, M.-C. Amann, R. Shau, and J. Rosskopf: "Demonstration of methane spectroscopy using a vertical-cavity surface-emitting laser at 1.68 µm with up to 5 MHz repetition rate", Meas. Sci. Technol., 14, 2003, 101-106
M. Ortsiefer, R. Shau, J. Rosskopf, and M.-C. Amann: "Long-wavelength InP-based VCSELs", chapter 12 in Vertical-Cavity Surface-Emitting Laser Devices, Springer ISBN 3-540-67851-4, 2003, 367-381
M. Ortsiefer, R. Shau, F. Mederer, R. Michalzik, J. Rosskopf, G. Böhm, F. Köhler, C. Lauer, M. Maute, and M.-C. Amann: "High-speed modulation up to 10 Gbit/s with 1.55 µm wavelength InGaAlAs VCSELs", Electron. Lett., 38, 2002, 1180-1181
R. Shau, M. Ortsiefer, J. Rosskopf, G. Böhm, F. Köhler, and M.-C. Amann: "InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth", IEEE 18th International Semiconductor Laser Conference, Garmisch-Partenkirchen 2002, Conference Digest 143-144
G. Böhm, M. Ortsiefer, R. Shau, J. Rosskopf, R. Meyer, F. Mederer, and M.-C. Amann: "InP-based VCSEL technology covering the wavelength range from 1.3 to 2 µm", International Conference on Molecular Beam Epitaxy, San Francisco 2002, Conference Digest 79-80
M. Ortsiefer, R. Shau, F. Mederer, R. Michalzik, J. Rosskopf, G. Böhm, F. Köhler, C. Lauer, M. Maute, M.-C. Amann: "High-speed data transmission with 1.55 µm vertical-cavity surface-emitting lasers", 28th European Conference on Optical Communication, Copenhagen 2002, Post-deadline session PD4.9
M.-C. Amann: "Long-wavelength InP-based VCSELs", 5th International Conference on Mid-Infrared Optoelectronic Materials and Devices, Annapolis / Maryland 2002
C. Lauer: "Investigation of tunnel junction resistance in BTJ-VCSELs", European Semiconductor Laser Workshop, Copenhagen 2002
M. Ortsiefer, M.-C. Amann: "Long-wavelength InP-based vertical-cavity surface-emitting lasers", Conference on Lasers and Electro-Optics (CLEO), Long Beach 2002, Technical Digest 437, ISBN 1-55752-705-9
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, J. Rosskopf, and M.-C. Amann: "Thermal conductivity analysis and device performance of 1.55 µm InGaAlAs/InP buried tunnel junction VCSELs", Phys. Stat. Sol. (A), 188, 2001, 913-919
R. Shau, M. Ortsiefer, J. Rosskopf, G. Böhm, F. Köhler, and M.-C. Amann: "Vertical-cavity surface-emitting laser diodes at 1.55 µm with large output power and high operation temperature", Electron. Lett., 37, 2001, 1295-1296
M. Ortsiefer "Langwellige Vertikalresonator-Laserdioden im Materialsystem InGaAlAs/InP", „Selected Topics of Semiconductor Physics and Technology“, 35, ISBN 3-932749-35-3, 2001
R. Shau, M. Ortsiefer, and M.-C. Amann: "InP-based long-wavelength VCSELs with buried tunnel junction", European Semiconductor Laser Workshop, Ghent 2001
M. Ortsiefer and M.-C. Amann: "Recent progress of long wavelength VCSEL research", International Conference on Solid State Devices and Materials, Tokyo 2001, Conference Digest 592-593
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, J. Rosskopf, G. Steinle, C. Degen, and M.-C. Amann: "High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 µm wavelength", 27th European Conference on Optical Communication, Amsterdam 2001
M.-C. Amann, M. Ortsiefer, R. Shau, J. Rosskopf, F. Köhler, and G. Böhm: "Long-wavelength buried-tunnel-junction vertical-cavity surface-emitting lasers", Advances in Solid State Physics, 41, Springer ISBN 3-540-42000-2, 2001, 75-85
G. Böhm, M. Ortsiefer, R. Shau, F. Köhler, R. Meyer, and M.-C. Amann: "AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers", Journal of Crystal Growth, 2001, 319-323
M.-C. Amann: "InP-based VCSELs for 1.55 µm wavelength range", Indium Phosphide and Related Materials, Nara 2001, Conference Digest 15-16
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, J. Rosskopf, and M.-C. Amann: "Design and technology of long-wavelength InP based VCSELs", 10th European Conference on Integrated Optics, International Workshop on Microcavity Light Sources, Paderborn 2001
M. Ortsiefer, R. Shau, M.-C. Amann: "Buried tunnel-junction long-wavelength vertical-cavity surface-emitting lasers", Optics in Information Systems, 12, 2001, 12
M. Ortsiefer, R. Shau, G. Böhm, M. Zigldrum, J. Rosskopf, F. Köhler, and M.-C. Amann: "90°C Continuous-wave operation of 1.83-µm vertical-cavity surface-emitting lasers",
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, M. Zigldrum, J. Rosskopf, and M.-C. Amann: "Index-guided long-wavelength InGaAlAs/InP vertical-cavity surface-emitting lasers", Advances in Solid State Physics, 40, Springer ISBN 3-528-03164-6, 2000, 577-586
R. Shau, M. Ortsiefer, G. Böhm, F. Köhler, and M.-C. Amann: "InP-based vertical-cavity surface-emitting lasers for 1.5-1.8 µm wavelength range", IEEE 17th International Semiconductor Laser Conference, Monterey 2001, Conference Digest 153-154
M.-C. Amann, M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, M. Zigldrum, and J. Rosskopf: "High-performance vertical-cavity surface-emitting lasers for telecommunication wavelengths", 26th European Conference on Optical Communication, Munich 2000
G. Böhm, M. Ortsiefer, R. Shau, F. Köhler, R. Meyer, and M.-C. Amann: "AlGaInAs/InP-epitaxy for long wavelength vertical-cavity surface-emitting lasers", International Conference on Molecular Beam Epitaxy, Beijing, 2000, Conference Digest 115
R. Shau, M. Ortsiefer and M.-C. Amann: "InP-based VCSELs for 1.5-1.8 µm wavelength range", European Semiconductor Laser Workshop, Berlin 2000
R. Shau, M. Ortsiefer, M. Zigldrum, J. Rosskopf, G. Böhm, F. Köhler, and M.-C. Amann: "Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 µm wavelength range", Electron. Lett., 36, 2000, 1286-1287
M. Ortsiefer, R. Shau, M. Zigldrum, G. Böhm, F. Köhler, M.-C. Amann: "Submilliamp long-wavelength InP-based vertical-cavity surface-emitting laser with stable linear polarisation", Electron. Lett., 36, 2000, 1124-1126
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, and M.-C. Amann: "Room-temperature cw 1.5 µm InGaAlAs/InP vertical-cavity laser with high efficiency", Conference on Lasers and Electro-Optics (CLEO), San Franciso 2000, postdeadline CPD 11-1 / 21
M. Ortsiefer "Langwellige Vertikalresonator-Laserdioden im Materialsystem InGaAlAs/InP", „Selected Topics of Semiconductor Physics and Technology“, 35, ISBN 3-932749-35-3, 2001
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, and M.-C. Amann: "Low-threshold index-guided 1.5 µm long-wavelength vertical-cavity surface-emitting laser with high efficiency", Appl. Phys. Lett., 76, 2000, 2179-2181
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, G. Abstreiter, and M.-C. Amann: "Low-resistance InGa(Al)As tunnel junctions for long-wavelength vertical-cavity surface-emitting lasers", Jpn. J. Appl. Phys., 39, 2000, 1727-1729
M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, and M.-C. Amann: "Room-temperature operation of index-guided 1.55 µm InP-based vertical-cavity surface-emitting laser", Electron. Lett., 36, 2000, 437-438
M. Arzberger, M. Lohner, G. Böhm, and M.-C. Amann: "Low-resistivity p-side contacts for InP-based devices using buried InGaAs tunnel junction", Electron. Lett., 36, 87-88, 2000
M.-C. Amann, M. Ortsiefer, and R. Shau: "Low-resistive tunneling contacts for InP based 1.55 µm VCSELs", European Semiconductor Laser Workshop, Paris 1999
M. Ortsiefer, M. Lohner, R. Shau, G. Böhm, and M.-C. Amann: "Low-resistance InGaAs tunnel junctions on InP for long-wavelength VCSELs", Semiconductor and Integrated Optoelectronics (SIOE), Cardiff 1999